Founded in 2021, Shanghai Xinhua Rui Semiconductor Technology Co. develops, produces and sells automotive grade IGBTs and SIC third generation power semiconductors. The R&D center is located in Pudong, Shanghai, with a production base in Dongtai Hi-Tech Zone, Jiangsu Province with an annual capacity of 2 million power modules.
The team has developed the third generation RSP4.1 Silicon Carbide MOSFET chips and the seventh generation 1.6um pitch microtrench process IGBT chips. 1200V Silicon Carbide power modules with multi-chip paralleling and double sided silver sintering technology meet the customer's demand for high voltage platforms at 800V and high power above 250KW. 750V IGBT power modules are available in S-Pack, Plasticized and H-Boost. 750V IGBT power modules are available in S-PACK and H-Boost frame potting packages to meet the demand of 400V platform with 60-200KW power band.