BASiC Semiconductor Ltd.
BASiC Semiconductor Ltd., the innovative enterprise of Wide-Band-Gap (WBG) semiconductor industry in China, is committed to the R&D and industrialization of SiC power devices. The R&D centers are located in Nanshan Shenzhen, Pingshan Shenzhen, Yizhuang Beijing, Xinwu Wuxi，Hongkong and Nagoya Japan. The R&D fields cover the whole industrial chain of SiC power devices, such as chip design, wafer fabrication, packaging test and driver circuits. BASiC holds over two hundred intellectual property rights and successively launched series of products such as discrete SiC schottky diodes ＆ MOSFETs, automotive full-SiC power modules and power device Driver ICs etc. The products are widely used in renewable power generation, electric vehicles, locomotive traction, industrial drives, smart grids and other fields.
Product 1
Development technology/material/manufacturing process nameAutomotive HPD SiC MOSFET Module Pcore6
Innovation HighlightsWith adoption of pressure-assisted silver sintering process, high-density copper wire bonding technology，Si3N4 AMB ceramic substrate and a direct liquid-cooled Pin Fin structure, the Pcore6 series is a compact power module designed for the efficiency improvement of hybrid and electric vehicles, which features with low loss, high blocking voltage, low on-resistance, high current density and high reliability (higher than AQG-324 reference standard), etc.
Applications hybrid and electric vehicles
Photo of exhibits recommended
Product 1
Development technology/material/manufacturing process nameAutomotive TPAK SiC MOSFET Module Pcore1
Innovation Highlights Automotive TPAK SiC MOSFET Module Pcore1 is a high current density single-switch module, designed specifically for the main traction inverter of new energy vehicles. The power module uses pressure-assisted silver sintering process and Si3N4 AMB ceramic substrate, which reduces the total thermal resistance of the device.
Pcore1 can be connected in series or parallel to accommodate different inverter output power requirements. The module is characterised by low switching losses, low on-resistance, high blocking voltage, high current density, and high reliability.
Applications new energy vehicles
Photo of exhibits recommended
Product 1
Development technology/material/manufacturing process nameAutomotive DCM SiC MOSFET Module Pcore2
Innovation Highlights With high current density, the Automotive DCM SiC MOSFET Module Pcore2 is specifically designed for the main traction inverter of new energy vehicles.
This power module employs pressure-assisted silver sintering process, high-density copper wire bonding technology，Si3N4 AMB ceramic substrate and a direct liquid-cooled Pin Fin structure. The module is characterised by low switching losses, low on-resistance, high blocking voltage, high current density, and high reliability.
Applications new energy vehicles
Photo of exhibits recommended