Hangzhou Garen Semiconductor Co., Ltd
Hangzhou Garen Semiconductor Co., Ltd. is a technology-based enterprise that focuses on the research and development, production, and sales of wide bandgap semiconductor materials such as gallium oxide. The company relies on the National Key Laboratory of Silicon and Advanced Semiconductor Materials and the Zhejiang University Hangzhou International Science and Technology Innovation Center, and has formed a research and development, production, and operation team with rich industry experience, led by academicians of the Chinese Academy of Sciences. Garen Semiconductor Co., Ltd. leads industry innovation, successfully pioneering new technologies for gallium oxide single crystal growth such as casting method, and achieving breakthroughs in production technology for 6-inch single crystal substrates and 2-inch (010) single crystal substrates. The company has mastered the core technology of the entire chain of gallium oxide growth, processing, and epitaxy, and has obtained more than ten international and domestic invention patents, helping the domestic gallium oxide related industry break free from international monopolies and blockades, and providing customers with high-quality gallium oxide substrate products with completely independent intellectual property rights.
Product 1
Development technology/material/manufacturing process name6-inch gallium oxide single crystal substrate
Innovation Highlights1. Pioneering casting method technology route: the largest size
gallium oxide single crystal substrate in China;
2. High quality, low defect density: the half width of XRD is as
low as 50 arcsec, and the defect density is less than
10^4/square centimeter;
3. With diverse doping and adjustable electrical performance: we
provide customized services for customers.
Applications High voltage power devices, RF devices, and sun blind detection devices.
Photo of exhibits recommended
Product 1
Development technology/material/manufacturing process name2-inch wafer level (010) gallium oxide single crystal substrate
Innovation Highlights 1. The first domestic wafer level (010) crystal surface gallium oxide substrate;
2. High resistance semi-insulating substrate with a resistivity of up to 10^10 Ω cm.
Applications High voltage power devices, RF devices, sun blind detection devices
Photo of exhibits recommended
Product 1
Development technology/material/manufacturing process nameGallium oxide seed crystal
Innovation HighlightsThe crystal orientation, size, and electrical properties of seed crystals can be customized according to customer needs
Applications High voltage power devices, RF devices, sun blind detection devices
Photo of exhibits recommended