.Shanghai Xinhua Rui Semiconductor Technology Co.
Founded in 2021, Shanghai Xinhua Rui Semiconductor Technology Co. develops, produces and sells automotive grade IGBTs and SIC third generation power semiconductors. The R&D center is located in Pudong, Shanghai, with a production base in Dongtai Hi-Tech Zone, Jiangsu Province with an annual capacity of 2 million power modules.
The team has developed the third generation RSP4.1 Silicon Carbide MOSFET chips and the seventh generation 1.6um pitch microtrench process IGBT chips. 1200V Silicon Carbide power modules with multi-chip paralleling and double sided silver sintering technology meet the customer's demand for high voltage platforms at 800V and high power above 250KW. 750V IGBT power modules are available in S-Pack, Plasticized and H-Boost. 750V IGBT power modules are available in S-PACK and H-Boost frame potting packages to meet the demand of 400V platform with 60-200KW power band.
Product 1
Development technology/material/manufacturing process name1200V H-Pack Silicon Carbide Molded Modules
Innovation Highlights1、Advanced high thermal conductivity nano-silver sintering process and high-performance copper wire bonding technology
2、New dumbbell type heat dissipation structure design.
3、Low loss, low thermal resistance 0.08K/W.
4、650A output current, the maximum can meet the needs of 400kW motor
Applications EV/HEV inverters
Photo of exhibits recommended
Product 1
Development technology/material/manufacturing process name750V H-Boost IGBT Module
Innovation Highlights1、High thermal conductivity ceramic copper-clad substrate Al2O3 and Si3N4
2、Covering 560A to 950A current range
3、Low thermal resistance of 0.11K/W
4、Maximum meets the needs of 200kW motor
5、Passed the automotive grade AQG324 examination
Applications EV/HEV inverters
Photo of exhibits recommended
Product 1
Development technology/material/manufacturing process name750V IGBT Wafer
Innovation Highlights1.Seventh generation Trench FS 1.6pitch micro trench process
2. Multiple high-energy H injection process on the backside
3.Ultra-thin chip process, backside thinning to 75um
Applications EV/HEV power module
Photo of exhibits recommended