Hua semiconductor Co.,Ltd

Hua Semiconductor Co., Ltd. is headquartered in Shanghai's Zhangjiang High-Tech Park. The company specializes in the design, R&D, packaging, testing, and production of automotive-grade power semiconductor IGBT/SiC chips and modules, while serving emerging markets such as new energy vehicles, photovoltaics, and energy storage. With a core team composed of professionals from renowned global semiconductor and automotive electronics companies, the company possesses key technologies in chip design, product development, and module manufacturing. It operates an R&D center in Shanghai and maintains an automotive-grade reliability laboratory in Lingang, Shanghai. Through its established automotive semiconductor innovation consortium with Shanghai Jita Semiconductor Co., Ltd., the company ensures dedicated production capacity and technical support. Its state-of-the-art automotive semiconductor production line and factory in Dongtai City, Jiangsu Province have obtained IATF 16949 automotive-grade quality system certification, fully meeting international certification standards. The company has secured design wins from multiple leading customers in new energy vehicle motor control systems and power supply applications.

Product 1
Development technology/material/manufacturing process name

Chip Inlay Power Board Packaging

Innovation Highlights

Power chips and insulation layers are embedded in a PCB with optimized CTE, using micro-vias, copper plating, and etching to carry current. This removes parasitic inductance from bonding wires and improves current sharing between chips. CIPB modules reduce switching failures by about two-thirds and can cut chip usage by around 20% for the same output current. CIPB packaging is simpler and more compact. Higher switching frequency in the main drive system boosts efficiency, reduces inverter size by one-third, and increases motor speed. CIPB modules can handle several times more power cycles than traditional frame-based modules under the same ΔTvj. CIPB layout is more flexible, supports more components, shortens development time, and speeds up product iteration.

Development phase

实车耐久测试

Applications

EV/HEV inverters

Photo of exhibits recommended

Product 1
Development technology/material/manufacturing process name

New Generation Power Stereo Module for New Energy Vehicle Main Drive

Innovation Highlights

- Compatible with both Si and SiC, this product adopts AMB ceramic substrate + copper clip bonding technology to replace traditional wire bonding, achieving low parasitic parameters, low thermal resistance, and high current density. - It integrates four SiC chips, doubling energy density compared to traditional TPAK packaging, with a thermal resistance of only 0.0965°C/W. Its volume/weight is reduced to one-third of conventional modules, achieving a 30% weight reduction. - The aluminum dual-sided liquid cooling design ensures chip junction temperatures <170°C under 850V/650Arms operating conditions. - Copper clip and silver sintering processes optimize thermal expansion matching (16.5 ppm/K), effectively reducing stray inductance and thermal stress.

Development phase

实车耐久测试

Applications

EV/HEV inverters

Photo of exhibits recommended

Product 1
Development technology/material/manufacturing process name

Innovation Highlights

Development phase

Applications

Photo of exhibits recommended

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