Hunan Sanan Semiconductor Co., Ltd.
Hunan Sanan Semiconductor Co., Ltd (Sanan Semiconductor), a wholly owned subsidiary of Sanan Optoelectronics, a listed company, is a manufacturer of power semiconductor products and foundry services. The company's products and services include SiC MOSFET/diode, SiC substrate/epitaxial, automotive-grade SiC module foundry, etc. The performance and reliability of the products meet the industry's high standards, and it serves more than 800 customers in the fields of electric vehicles, photovoltaic energy storage, and charging stations, etc. The company has accumulated more than 200 million SiC chips/devices in shipment. The company has one of the few domestic SiC industry chain vertically integrated manufacturing services platform, can provide crystal growth, substrate preparation, epitaxial growth, chip processing, and packaging testing of the whole process of manufacturing services, to achieve product iteration, quality, delivery of a full range of control; and the scale of production capacity, technical level in the global industry is competitive, can be a strong guarantee of supply to meet market demand.
Product 1
Development technology/material/manufacturing process nameSiC MOSFET
Innovation HighlightsBased on a vertically integrated SiC manufacturing platform, Sanan Semiconductor launched its SiC MOSFET technology for renewable energy systems. This industry leading technology helps customers achieve higher power density, a more compact module design, and an overall lighter weight of the system hardware.
Features
· Easy to drive
· Low Rdson
· High reverse blocking capabilities
· Low reverse recovery time
· AEC-Q101 qualified
ApplicationsAutomotive Drive, OBC, Charging piles, PV inverter, Energy storage
Photo of exhibits recommended
Product 1
Development technology/material/manufacturing process nameSiC Substrate
Innovation HighlightsSanan Semiconductor has further optimized the overall defect value of SiC substrate through its exclusive crystal growth process technology; and adopted the best grinding process in China to achieve TTV(avg)<1.5um for SiC substrate.
ApplicationsSiC device manufacturing
Photo of exhibits recommended
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